国家/地区 美国（4） 中国（3） 韩国（2）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5） H01L（4） C01B（3）
C23F（2） C30B（2） G03F（2）
IPC C23C028/00（5）
发明人 CHEN C（2） TU C（2）
公开年 2016（2） 2018（2）
申请年 2016（5）
专利权人 TAIWAN SEMIC.（2）

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Graphene pellicle method for extreme ultraviolet lithography, involves attaching carrier to graphene layer, removing substrate from first assembly, and removing first material layer from first assembly.

TU C, CHEN C

Electronic apparatus has peeling prevention sections that are set with insulating film exposed from hole, and flange section that is contacted with one surface of graphene film inserted by insulating film and flange section.

KOJIMA E

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F