国家/地区 中国（39）
IPC部 H（39）
IPC大类 H01（30） H05（8） C01（4）
B82（2） C09（2） C23（2）
C25（2） G05（2） H02（2）
IPC小类 H01M（15） H01B（6） H01G（5）
H05B（5） C01B（4） H01L（4）
H05K（3） B82Y（2） C09D（2）
C23C（2） C25D（2） G05B（2）
H02B（2）
IPC H01M004/62（9） H01M010/0525（9） H01M004/36（7）
H01B001/02（5） H01B001/04（4） H01G011/24（3）
H01G011/36（3） H01G011/86（3） H01M004/38（3）
H01M010/054（3） H05B003/14（3） B82Y030/00（2）
C01B032/184（2） C23C016/26（2） C25D003/66（2）
发明人 WANG C（39）
公开年 2020（22） 2019（12） 2021（5）
申请年 2019（39）
专利权人 XINJIANG XIJ.（5） UNIV CENT SO.（3） AECC BEIJING.（2） ELECTRIC POW.（2）
GUANGDONG PO.（2） GUIZBUO LIGH.（2） JIAN B（2） MO Y（2）
UNIV BENGBU（2） WANG C（2）

Electric heating coating paint for electric heating coating, comprises silicone rubber, modified carbon nanotubes, and diluents, where nanotubes and modified graphene are obtained by silver plating and octadecylamine grafting treatments.

YU M, MA D, GENG Y, WANG J, WANG C, ZHANG F, GAO F

Preparing flexible super capacitor involves using phytic acid/graphene oxide modified foam carbon by mixing phytic acid and graphene solution uniformly in presence of foam carbon to obtain precursor solution.

ZHOU X, WANG C, CHU F, WANG J, ZHANG D

Display panel for display device, has color conversion layer that is formed in first hole, second substrate that includes scattering structure at position facing second hole, and light-emitting unit that corresponds to first/second hole.

WANG C, JIANG B

Integrated circuit comprises semiconductor substrate, source region with doped semiconductor material, drain region with doped semiconductor material, gate formed between source region and drain region and nanosheet with specific regions.

LIN Y, CHIU Y, CHANG S, TSAI C, HUANG Y, CHENG K, WANG C, QIU Y, ZHANG S, CAI Q, CHENG G, WANG Z

Method for preparing cathode material structure of lithium ion battery, involves providing three-dimensional graphene nano-silicon composite layer, locating graphene layer between surface of nano-silicon particles and nano-silicon particles.

FANG X, ZHANG P, WANG C, CHEN X

Power system based RS485 communication control device, has device main body provided with central processing structure, storage structure, signal output structure, graphene heat conducting sheet, first radiating fin structure and second radiating fin structure.

LIU J, LIU F, WANG C, WEN R, WANG L, LIU R, ZHANG W

Graphene FET for use in integrated circuit, has one conductive region that is formed by graphene doped with conductivity type, and other conductive region which is formed by graphene doped with another conductivity type.

WANG C, YE L

Graphene battery protection device, has protective box whose inner side is provided with sliding rail that is located at rear end of separating plate, and first movable pin provided between linkage rod and first sliding block.

ZHAO Q, ZHANG S, WANG C, JIANG G, OUYANG Q, HU M

Graphene far infrared drying tunnel device, has conveying belt whose top end is equipped with box body, where two ends of box body are equipped with dust removing mechanism and end of mounting plate is equipped with alarm.

QIAO M, WANG C, FENG S

Graphene material based wearable device, has storage module electrically connected with control circuit board, and arc-shaped rod whose end is provided with picking rod, where outer side of bearing body is provided with antibacterial protective sleeve.

WANG C