国家/地区 中国（2） 日本（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人 MATSUMOTO T（2）
公开年 2022（3）
申请年 2021（4）
专利权人 TOKYO ELECTR.（2）

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Silicon-based bonded graphene radiating copper-clad ceramic substrate comprises copper foil layer orderly set from up to down, ceramic layer and silicon-based bonding graphene coating set on lower surface of ceramic layer.

LIANG X, JIA T, WU X, SUN X, YANG H, ZHANG G, RUAN S

Method for preparing copper-based graphene coating structure, involves controlling decomposition rate and nucleation density, and coating graphene on surface of copper-based structure to complete preparation of double-sided superimposed copper-based graphene coating structure.

SHI K, SU J, LIANG H, XU J, WU S, LI J, WANG G