国家/地区 美国（4） 韩国（3）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/26（4） C01B032/186（3） C01B032/182（2）
C23C016/50（2） C23C016/505（2） C23C016/511（2）
H01L021/285（2） H01L021/768（2） H01L023/532（2）
发明人 LEE C（4）
公开年 2021（2）
申请年 2021（4）
专利权人 SAMSUNG ELEC.（4）

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S