国家/地区 中国（3） 美国（2）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（3）
IPC H01L023/48（2）
发明人 LU W（2） LV W（2）
公开年 2022（2）
申请年
专利权人 ADVANCED SEMICONDUCTOR ENG INC（4）

Semiconductor substrate comprises interconnect piece comprising first metal layer located on substrate of surface substrate, second metal layer on first layer, and adhesion layer located between first and second metal layers.

ZHANG H, CHEN Z

Radiating structure for packaging structure has metal layer comprising crystal seed layer formed with metal layer, metal parts separated from each other set on seed layer, crystal seeds connected with each other through hole, through hole formed between crystal seeds.

LV W

Inductor structure has ferromagnetism structure arranged on isolation structure, and coil structure that surrounds ferromagnetism structure.

LU W

Connection structure for semiconductor device package, comprises intermediate conductive layer has first coefficient of thermal expansion, and first conductive layer and intermediate conductive layer include graphene.

LU W, FANG J, LV W, FANG R