国家/地区 美国（4）
IPC部 C（4） H（4）
IPC大类 C23（4） H01（4）
IPC小类 C23C（4） H01L（4）
IPC C23C016/26（4） H01L021/02（3） C23C016/02（2）
C23C016/455（2） H01L021/285（2） H01L021/3205（2）
H01L021/768（2） H01L023/532（2）
发明人 NEMANI S D（4）
公开年 2020（2）
申请年 2019（2） 
专利权人 APPLIED MATERIALS INC（4）

Improving graphene deposition involves exposing substrate surface to oxygenating plasma to improve substrate surface quality or deposition parameter, where oxygenating plasma comprises oxygen or water, oxygenating plasma is microwave plasma, remote plasma, conductively coupled plasma.

YIEH E Y, NEMANI S D, YING C C, LIANG Q, CHEN E, ZHOU J

Forming electronic device involves forming graphene barrier layer on substrate surface and depositing fill layer over the graphene barrier layer, where graphene barrier layer prevents diffusion of halogen or boron.

NEMANI S D, MALLICK A B, GANDIKOTA S, WU Y

Forming graphene layer for improving graphene deposition, involves exposing a substrate surface comprising a dielectric material to a microwave surface-wave plasma comprising hydrocarbon and hydrogen radicals to form graphene layer.

ZHOU J, CHEN E, LIANG Q, YING C C, NEMANI S D, YIEH E Y

Forming electronic device i.e. 3-dimentional NAND device involves forming graphene barrier layer on substrate surface and depositing fill layer over barrier layer that prevents diffusion of elements between fill layer and substrate surface.

WU Y, GANDIKOTA S, MALLICK A B, NEMANI S D