国家/地区 法国（6） 世界知识产权组织（4） 欧洲专利局（EPO）（2） 美国（2）
IPC部 C（6） B（5）
IPC大类 C01（6） B82（5） C23（3）
C30（3） B01（2）
IPC小类 C01B（6） B82Y（5） C23C（3）
C30B（3） B01J（2）
IPC B82Y040/00（5） C01B031/02（5） C01B031/04（5）
B82Y030/00（3） C23C016/26（3） B01J023/76（2）
C30B029/36（2）
发明人 BACSA R（2） OUERGHI A（2） SERP P（2）
公开年 2013（6）
申请年 2011（6） 
专利权人 CENT NAT RECH SCI（6）

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Forming graphene layer on surface of substrate, comprises gradually heating substrate until sublimation of silicon of first row of atoms of free surface of silicon-carbide film, where free surface of silicon layer is stepped.

OUERGHI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Fabricating graphene sheets that are useful in field of nanoelectronics to form basic component of electronics e.g. transistor, by depositing hologenated aromatic molecules on substrate under ultra high vacuum, and polymerizing molecules.

SCHULL G, BULOU H, ROMEO M, SCHEURER F