国家/地区 中国（6）
IPC部 C（3） H（3）
IPC大类 H01（3） C01（2）
IPC小类 H01L（3） C01B（2）
IPC C01B031/04（2）
发明人 CHEN X（3） GUO L（3）
公开年 2016（3） 2015（2）
申请年 2015（6）
专利权人 CHINESE ACAD SCI PHYSICS INST（6）

Photovoltaic device in micro-nano device, has graphene layer whose one portion is located in opening of low semiconductor substrate and other portion on insulating layer and electrode is located on insulating layer and graphene layer.

GUO L, YANG J, CHEN X

Light source irradiate photovoltaic device, has electrode located on gain semiconductor substrate that is formed with graphene layer, where light energy of light source is greater than band gap of high blocking gain semiconductor substrate.

GUO L, CHEN X

Crucible for growing graphene on silicon carbide sheet, comprises cylindrical crucible body and crucible cap on cylindrical crucible body.

LU W, GUO L, CHEN X

Preparation of graphene insulation for metal substrate comprises heating graphene sample, depositing silicon on graphene surface and cooling.

ZHANG Y, WANG Y, GAO H

Preparation of suspended graphene used for preparing nanoporous sensor, involves forming expected structure on silicon carbide substrate by semiconductor method, and high-temperature thermal-decomposing silicon carbide substrate.

SHAN X, HU Y, LU X, ZHOU Z

Graphene nano-structure electronic device preparation method, involves forming medium material on surface of substrate, forming graphene on surface of substrate, and forming rest disconnected graphene in outer side of graphene area.

GU C, LI J, JIN A, YANG H, TANG C, JIANG Q