国家/地区 中国（4）
IPC部 C（3）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2） C01B032/184（2）
发明人
公开年 2015（4）
申请年 2014（2）  2015（2） 
专利权人 CHINESE ACAD SCI PHYSICS INST（4）

Growing P-type graphene comprises, at nitrogen-containing atmosphere, annealing silicon carbide substrate, and thermal decomposing.

CHEN X, GUO L, JIA Y, LU W, GUO Y

Preparation of highly crystalline graphene/hexagonal boron nitride with stacked structure comprises forming stack structure of graphene/hexagonal boron nitride, and carrying out heat treatment.

SHI D, WANG D, ZHANG G

Preparation of suspended graphene used for preparing nanoporous sensor, involves forming expected structure on silicon carbide substrate by semiconductor method, and high-temperature thermal-decomposing silicon carbide substrate.

SHAN X, HU Y, LU X, ZHOU Z

Graphene nano-structure electronic device preparation method, involves forming medium material on surface of substrate, forming graphene on surface of substrate, and forming rest disconnected graphene in outer side of graphene area.

GU C, LI J, JIN A, YANG H, TANG C, JIANG Q