国家/地区 美国（5）
IPC部 H（5） C（3）
IPC大类 H01（5） C01（2） C23（2）
IPC小类 H01L（5） C01B（2） C23C（2）
IPC H01L021/02（3） H01L021/20（3） H01L029/16（3）
H01L029/66（3） C01B031/04（2） C23C016/26（2）
发明人 DAVIS M A（5）
公开年 2014（4）
申请年 2014（3）  2013（2） 
专利权人 DAVIS M A（5）

Integrated graphene-based structure for electronic device used in optical system, has array of quantum dots that exhibits set of characteristic electromagnetic interference properties in response to electromagnetic radiation.

DAVIS M A

Forming graphite-based structure involves patterning substrate thus forming elements, creating graphene initiating layer on first side wall of first element, and generating graphene on first side wall using graphene initiating layer.

DAVIS M A

Method for forming graphite-based structure used for e.g. electronic devices, involves patterning substrate, forming elements on substrate, depositing graphene initiating layer on top surface of each element, and generating graphene.

DAVIS M A

Graphite-based device used in e.g. solar cells comprises substrate comprising zones, where first zone in zones comprises surfaces and first surface is adjacent to second surface in surfaces, and graphene stack having first graphene stack.

DAVIS M A

Forming a graphite-based structure e.g. diode, transistor or LED on a substrate e.g. glass, comprises patterning a substrate to form elements on substrate, and concurrently generating a first graphene layer and a second graphene layer.

DAVIS M A