国家/地区 日本（4）
IPC部 C（4） B（3） H（3）
IPC大类 C01（4） B82（3） H01（3）
B05（2） B32（2）
IPC小类 C01B（4） H01L（3） B05D（2）
B32B（2） B82Y（2）
IPC C01B031/02（4） C01B031/04（3） B05D005/12（2）
B32B003/10（2） B82Y030/00（2） H01L021/28（2）
H01L051/40（2）
发明人 MILLER S（2） MILLER S A（2） YAGER T A（2）
公开年 2013（2）
申请年 2012（2） 
专利权人 EMPIRE TECHNOLOGY DEV LLC（4）

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Detecting defect in graphene sample involves exposing sample having graphene and some defects, to gas under specific condition, removing gas, placing obtained marked sample in detector system, and detecting marks bonded to defects in sample.

MILLER S A, MILLER S

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Graphene structure for electronic device elements, contains graphene fixed to substrate in which bonding is formed between portion to which hydrophilic process is performed, or portion to which hydrophilic process is not performed.

SANDHU A