国家/地区 日本（5）
IPC部 C（4） B（2） H（2）
IPC大类 C01（4） B01（2） C23（2）
H01（2）
IPC小类 C01B（4） B01J（2） C23C（2）
H01L（2）
IPC C01B031/02（3） C23C016/26（2） H01L021/336（2）
发明人
公开年 2013（2） 2014（2）
申请年 2012（5）
专利权人 FUJITSU LTD（5）

Method for predicting electric-conduction characteristic of e.g. graphene nano ribbon used for electronic apparatus, involves producing structural model inserted with channel region set as analysis object group with electrode.

JIPPO H

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Electronic device e.g. metal oxide-Semiconductor field effect transistor, consists of graphene and carbon nanotube which are electrically connected through catalyst metal.

KAWABATA A

Processing of graphene sheet-type material used for e.g. semiconductor device, involves irradiating ultraviolet-ray to surface of graphene sheet-type material in atmosphere containing active substance and modifying surface layer.

ASANO T

Electronic device e.g. transistor, has insulating layer having space, formed on substrate, and graphene crosslinked between pair of electrodes formed on both sides of space, through space top.

SATO S