国家/地区 中国（6） 美国（3） 世界知识产权组织（2）
IPC部 B（3） C（3） H（3）
A（2）
IPC大类 H01（3） B82（2） C01（2）
C23（2）
IPC小类 B82Y（2） C01B（2） C23C（2）
H01L（2）
IPC B82Y040/00（2） C01B031/04（2） C23C016/02（2）
C23C016/26（2） C23C016/56（2）
发明人 GUO H（7） DENG P（2） LEI T（2）
ZHANG K（2） ZHANG Y（2）
公开年 2012（2） 2017（2）
申请年 2017（3）  2012（2） 
专利权人 GUO H（7）

Graphene infrared heating hand warming bag, has outer sleeve whose side is provided with insulating layer, and heating cavity formed between insulating layer and outer sleeve, where two ends of heating cavity are formed with placing opening.

GUO H

Graphene bag, has bag body provided with upper protection layer, and first graphene layer fixed with second graphene layer, where first graphene layer and second graphene layer are tightly pressed with insulating resin layer.

GUO H

Table tennis bottom plate has ejection device layer that includes graphene layer which is equipped with shock absorber, and hard protective layer is laminated on fibrous layer.

GUO M, GUO H

High-strength high-conductivity copper-based alloy blank comprises copper, graphene, and niobium and/or silver.

GUO H

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Preparing silicon intercalated epitaxial monolayer graphene comprises growing large scale high-quality graphene on metal surface, depositing silicon on the prepared epitaxial graphene and annealing to high temperature.

GAO H, PAN Y, GAO M, MAO J, HUANG L, ZHOU H, WANG Y, GUO H, DU S