国家/地区 韩国（5） 美国（2） 世界知识产权组织（2）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC
发明人 JUNG G Y（2） LEE B H（2） PARK Y S（2）
公开年 2013（4） 2014（2）
申请年 2012（6）
专利权人 GWANGJU INST SCI TECHNOLOGY（6）

Method for manufacturing graphene nano array and field-effect transistor including graphene nano array, involves forming graphene nano array on protective layer etched along nanotube pattern and graphene sheet, and substrate is prepared.

JUNG G Y, PARK Y S

Manufacturing graphene nanoarray used as channels of field-effect transistor, comprises forming protective layer, sacrificial layer and resist layer on substrate having graphene sheet, and etching sacrificial layer and protective layer.

JUNG G Y, PARK Y S

LED, has graphene layer formed on second conductive semiconductor layer, two electrodes formed on first conductive semiconductor layer and graphene layer, and metal nanoparticles formed on some region of graphene layer.

LEE D S, SHIM J P, PARK S J, CHOE M H, KIM D H, LEE T H

Hydrogel-forming composition useful for forming gel, comprises specified amount of graphene oxide and triblock copolymer.

GIYOONGTAE, SAHU A

Method for transferring graphene thin film for electric component, involves attaching supporting thin film to graphene film formed on substrate, removing substrate, and forming device including thin film attached with graphene film.

LEE K, KAHNG Y H, LEE J, LEE B H, LEE K H, LEE J H

Flash memory device, has ferroelectric layer arranged between graphene layer and programming electrode, source electrode arranged in end part of graphene layer, and drain electrode arranged in another end of graphene layer.

HWANG H J, LEE B H