国家/地区 美国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L021/20（2） H01L047/00（2）
发明人 WANG S（4）
公开年 2011（3）
申请年 2010（3） 
专利权人 HEWLETTPACKARD DEV CO LP（4）

Graphene memristor used as switches in electronic circuits comprises two electrodes, active region interspersed between the electrodes, defective graphene structure, fast diffusing ions, and a source that generates the electric field.

MIAO F, YANG J, WU W, WANG S, WILLIAMS R S

Defective graphene-based memristor, used in nanoelectronic memories, computer logic and neuromorphic computer architectures, comprises first electrode, defective graphene structure, memristive material, second electrode and voltage source.

YANG J, MIAO F, WU W, WANG S, WILLIAMS R S

Memristive device used in crossbar array, has graphene (20) or graphite that is arranged between active region and bottom electrode or top electrode.

YANG J, MIAO F, WU W, WANG S, WILLIAMS R S

Semiconductor structure of e.g. transistor, has epitaxial lateral over growth (ELOG) material positioned upon thermally and electrically conductive (TEC) mask and formed of carbon nanostructures and graphene material.

MATHAI S V, THYLEN L H, WANG S