国家/地区 中国（3） 世界知识产权组织（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01M（2）
IPC
发明人 LI Y（2）
公开年 2018（4）
申请年 2017（4）
专利权人 HUAWEI TECHNOLOGIES CO LTD（4）

Graphene FET, has gate dielectric layer and gate electrode located on channel layer between source electrode and drain electrode, and substrate including support unit provided with projection portions to come into contact with channel layer.

LIANG C, QIN X, ZHANG C

Electrode material for battery, has graphene quantum dots located in interspace between two layers of silicon-based material, where graphene quantum dots are located on outer surface of layered silicon core.

YU Z, LI Y

Method for modifying current collector of energy storage device, involves growing graphene layer, which is perpendicular to carbon nano tube array, where base of current collector comprises carbon nano tube array.

YANG W, LI Y, XU G

Functionalized graphene used in polyorganosiloxane, comprises one or more active molecules and graphene, and multiple active molecules are isolated from each other, where each of active molecules is grafted onto graphene.

XU Y, LIN Y, HODGE S, FERRARI A