国家/地区 中国（4）
IPC部 B（3） G（3）
IPC大类 G01（3） B82（2）
IPC小类 G01N（3） B82Y（2）
IPC G01N027/12（3） G01N033/00（2）
发明人 ROTH A M（2） ZOEPFL A（2）
公开年 2022（2）
申请年 2022（2） 
专利权人 INFINEON TECHNOLOGIES AG（4）

Temperature-regulated chemi-resistive gas sensor for use in e.g. mobile phone, has circuitry for determining electrical sensor layer conductance signal representing varying electrical conductance of sensor layer and applying time windows.

ZOEPFL A, ROTH A M, EMMERT M, MEYER M, KRIVEC M, BREUER W, KRIEBECK M, ROSS A L, JOYPLE A, ROTH M A

Discrete or vertical power transistor device e.g. metal oxide semiconductor FET, for integrated circuit, has control electrode whose carbon adjoins dielectric opposite to channel region, where control electrode comprises gate electrode.

STORBECK O, SCHULZE H, SCHLOESSER T, MURI I, SIEMIENIEC R, STOBECK O, SCHLOSSER T

Gas sensing device e.g. chemiresistor gas sensing device for sensing target gas, has signal calibration unit that determines calibrated measurement value based on measurement signal and based on calibration model.

CARBONELLI C, KRUMBEIN U, TRAVAN C, KRUMBANE U

Composite material used for chemoresistive gas sensor, comprises graphene material, carbon nanotube material and metal-containing material including at least one metal element.

ROTH A M, ZOEPFL A, ROSS A M