国家/地区 中国（5）
IPC部 H（3） C（2）
IPC大类 H01（3） C01（2）
IPC小类 H01L（3） C01B（2）
IPC H01L021/336（2） H01L029/16（2）
发明人 JIN Z（4） PENG S（4） SHI J（4）
ZHANG D（4） HUANG X（3） YAO Y（3）
公开年 2017（5）
申请年 2017（5）
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（5）

Growing patterned graphene comprises forming nickel layer on the surface of substrate for providing growth substrate of graphene, covering surface patterning template on the surface of nickel layer and generating graphene pattern.

ZHANG D, JIN Z, SHI J, PENG S, HUANG X, YAO Y

Floating graphene-silicon heterojunction transistor structure, has gate dielectric layer and gate electrode that are formed on graphene film which is in contact with portion of source and drain regions to form heterojunction.

JIN Z, YAO Y, HUANG X, SHI J, PENG S, ZHANG D

Graphene device manufacturing method involves testing metal electrode around self aligned metal layer, so as to partially cover self-aligned metal layer.

PENG S, JIN Z, ZHANG D, SHI J

Self-aligned graphene-based FET manufacturing method, involves forming photo-resist with photo-resist layer, forming gate electrode with photo-resist layer and gate structure, and generating source electrode and drain electrode.

JIN Z, HUANG X, YAO Y, PENG S, SHI J, ZHANG D

Method for producing graphene material, involves placing carbonaceous compound material in high vacuum environment and irradiating two different wavelengths of laser light in same region of carbonaceous compound material.

XIA Y