国家/地区 中国（4）
IPC部 G（3） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L045/00（2）
发明人 DONG D（2） LI X（2） LV H（2）
XU X（2） YU J（2）
公开年 2021（2） 2022（2）
申请年 2020（4）
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（4）

Polishing head for chemical mechanical polishing device for polishing of wafer used in semiconductor manufacturing field, has polishing film whose working surface is formed with conductive layer, and power supply unit connected with conductive layer through contact point.

TIAN G, LU Y, YANG T, ZHANG Y, SHEN J

Resistive random access memory, has barrier structure set between resistance change layer and upper electrode for performing erasing operation on device, where electron passes through conduction band of barrier structure.

XU X, LI X, DONG D, YU J, LV H

Memristor for memristor-based neural morphology calculation chip, has barrier layer located on functional layer, and upper electrode layer that is located on barrier layer, where functional layer is resistive layer.

LIU M, LV H, ZHENG X, LI X, DONG D, YU J, XU X

Silicon optical device for heating optical waveguide during heating process of heating electrode, has adjusting plate for adjusting conduction range of heat field generated by heating electrode such that optical waveguide is heated.

YANG Y, TANG B, ZHANG P, OU X, SUN F, LI B, LIU R, HUANG K, XIE L, LIU D, LI Z