国家/地区 韩国（7）
IPC部 B（5） C（5） H（4）
IPC大类 B01（5） C01（5） C23（5）
H01（4）
IPC小类 B01J（5） C01B（5） C23C（5）
H01L（4）
IPC B01J019/08（5） C01B031/02（5） C23C016/26（5）
H01L021/336（3） H01L029/78（3） H01L021/027（2）
H01L021/268（2）
发明人 CHOI I S（7）
公开年 2012（5） 2013（2）
申请年 2011（5）  2010（2） 
专利权人 KOREA ADV INST SCI TECHNOLOGY（7）

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Graphene transistor manufacturing method involves forming drain and gate electrode on insulating layer that is laminated between source and drain regions.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Method for improving graphene property involves irradiating laser beam on graphene grown on substrate, and heat treating.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Method for manufacturing graphene transistor, involves laminating insulating layer in semiconductor device, providing drain and gate electrode metal layer that is laminated on source.

LEE K J, CHOI I S, CHOI S Y, HONG B H