国家/地区 韩国（4）
IPC部 C（4） B（2） H（2）
IPC大类 C01（4） C23（4） B01（2）
H01（2）
IPC小类 C01B（4） C23C（4） H01B（2）
IPC C01B031/02（4）
发明人
公开年 2013（2）
申请年 2012（2）  2013（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（4）

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Graphene film, useful in a LCD element and electronic paper display device, comprises self-assembled monolayer formed on substrate, and graphene oxide thin films formed on self-assembled monolayer.

HWANG J O, KIM S O

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J