国家/地区 韩国（6） 美国（2）
IPC部 H（5） C（2）
IPC大类 H01（5） C01（2）
IPC小类 H01L（5） C01B（2）
IPC C01B032/184（2） H01L031/0224（2） H01L045/00（2）
发明人 CHOI S Y（6）
公开年 2020（2） 2021（2）
申请年 2018（2）  2020（2） 
专利权人 KOREA ADVANCED SCI TECHNOLOGY INST（6）

Resistive RAM, has resistance change material layer that is formed on heat conductive material layer, and second electrode layer which is formed in resistor material layer.

CHOI S Y, CHANG B C

Optoelectronic device comprises substrate, channel layer stacked on substrate, source and drain electrodes spaced apart from each other and stacked on channel layer, and photoelectroactive layer stacked between source electrode and drain electrode.

CHOI S Y, SIK Y K, JUN L, PARKJUNGHOON

Soft memristor for soft neuromorphic system has metal diffusion barrier layer formed on first electrode layer, and resistive switching material layer formed on metal diffusion barrier layer.

CHA J H, JANG B C, CHOI S, CHOI S Y, CHANG B C, JUNHWE C

Making doped graphene thin film with mesoporous structure using flash lamp involves coating mixture solution of doping element source-having material with doping element and graphene oxide on substrate and irradiating light to the solution.

CHOI S, CHA J, KIM I, CHOI S Y, JUNHWE C, DOO K, KIM D H

Multilayer graphene-based optoelectronic device has multilayer graphene layer that serves to induce plasmon bonding between nanostructure layer and upper electrode at same time plays role of carrier generation by light.

CHOI S Y, JUN L

Manufacturing nitrogen-doped porous graphene involves preparing aqueous solution containing graphene oxide involves etching graphene oxide with etchant to produce porous graphene oxide in which one pore is formed.

CHOI J S, LEE J S, BANG G S, SHIN G H, CHOI S Y