国家/地区 韩国（7） 美国（3）
IPC部 C（7） B（2）
IPC大类 C01（7） C09（2）
IPC小类 C01B（7） C09K（2）
IPC C01B032/184（7）
发明人 CHOI S Y（2）
公开年 2019（2） 2020（2） 2022（2）
申请年 2018（2）  2019（2）  2021（2） 
专利权人 KOREA ADVANCED SCI TECHNOLOGY INST（7）

Palladium-reduced graphene composite useful in storing and transporting hydrogen energy comprises e.g. first palladium nanoparticles and second palladium nanoparticles spaced apart from first palladium nanoparticles.

CHO E S, HAN S M, KO J S, KIM D

Production of graphene quantum dots used in electronic device, involves thermally decomposing silicon carbide substrate in reduced pressure atmosphere in which mixed gas containing hydrogen is supplied.

CHO S O, LEENAEUN

Making doped graphene thin film with mesoporous structure using flash lamp involves coating mixture solution of doping element source-having material with doping element and graphene oxide on substrate and irradiating light to the solution.

CHOI S, CHA J, KIM I, CHOI S Y, JUNHWE C, DOO K, KIM D H

Producing porous structure-based graphene foam used as shock absorber, by heating dispersion containing graphene oxide in which porous structure is immersed, converting graphene oxide into reduced graphene oxide and freeze-drying hydrogel.

OH I K, OH J H, OH I, OH J

Manufacturing nitrogen-doped porous graphene involves preparing aqueous solution containing graphene oxide involves etching graphene oxide with etchant to produce porous graphene oxide in which one pore is formed.

CHOI J S, LEE J S, BANG G S, SHIN G H, CHOI S Y

Single-phase composition for preparing graphene-based compound, comprises hydroxyl group-containing carbon source, saccharide-based compound includes monosaccharide, single-phase composition comprises hydrocarbyl alcohol-based solvent.

PARK O O, LEE S H, IM S H, PARK O, HYUK I

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S