国家/地区 韩国（6）
IPC部 C（6） H（3）
IPC大类 C01（4） H01（3） C23（2）
C25（2）
IPC小类 C01B（4） C23C（2） C25D（2）
H01L（2）
IPC C01B031/04（2） C01B032/182（2） C23C016/26（2）
发明人 BAE S（6）
公开年 2018（3） 2016（2）
申请年 2016（3）  2015（2） 
专利权人 KOREA INST SCI TECHNOLOGY（6）

Manufacture of graphene thin film involves depositing metal catalyst on mold including substrate having graphene layer, forming graphene thin film on metal catalyst layer by chemical vapor deposition, and removing catalyst layer from mold.

LEE S H, BAE S, RHO H K, KIM T W, LEE S K, LEE D S

Producing graphene fiber composite useful in electronic device and electric wire, comprises e.g. performing chemical vapor deposition process to synthesize graphene layer on metal catalyst, and etching metal catalyst from graphene layer.

BAE S, KIM S J, RHO H K, LEE S K, KIM T W, LEE D S, LEE S H

Manufacture of graphene barrier film for e.g. electronic device, involves forming graphene precursor layer on catalyst layer, forming graphene layer and protective layer, removing catalyst layer and providing graphene layer to substrate.

KIM M J, SEO T H, LEE S, KIM S M, AHN S, BAE S, SON D I

Protection film useful for producing organic electronic device, comprises multiple plasma-treated graphene layers, and a non-plasma-treated pure graphene layer deposited on the plasma-treated graphene layer.

BAE S, KIM S J, KIM T W, LEE S H, KIM M J, LEE S K, SEO T H, PARK M

Cathode roll for manufacturing electroplated thin film, comprises graphene layer formed on cylindrical mold and pattern generating unit formed on the graphene layer, where the pattern generating unit has fine pattern.

LEE S H, RHO H K, BAE S, KIM T W, LEE D S

Non-volatile memory device consists of substrate, lower electrode, active layer containing metal oxide-graphene quantum dots and organic polymer material, and upper electrode, in order.

KIM T W, SON D I, BAE S, LEE S H, MOON B J, LEE D S, PARK M