国家/地区 韩国（15） 美国（7）
IPC部 C（11） H（7） B（6）
D（3）
IPC大类 C01（9） H01（6） B82（5）
C08（3） B01（2） D06（2）
H05（2）
IPC小类 C01B（9） B82B（5） H01L（5）
C08K（3） B01J（2） B82Y（2）
C08G（2） D06M（2） H01B（2）
H05B（2）
IPC C01B031/02（9） B82B003/00（5） B82B001/00（3）
C08K003/04（3） B82Y030/00（2） B82Y040/00（2）
C01B031/00（2） C01B031/04（2） D06M011/74（2）
H01L029/49（2） H01L029/786（2） H01L051/50（2）
发明人 KIM C K（4） HONG J（3） HONG J M（3）
LIM J A（3） SONG Y（3） SONG Y W（3）
CHOI W K（2） HONG S W（2） JUN S C（2）
JUNG J H（2） KIM H（2） KIM J H（2）
KIM S I（2） KIM Y H（2） KIM Y T（2）
公开年 2014（15）
申请年 2013（9）  2012（5） 
专利权人 KOREA INST SCI TECHNOLOGY（15）

Producing reduced graphene oxide-coated fiber yarn, comprises e.g. coating graphene oxide on swollen fiber yarn by immersing swollen fiber yarn in polar aprotic solvent dispersed with graphene oxide, and reducing graphene oxide.

SONG K G, HONG S W, RYU J H, PILLAI R S, JUNG J H

Photoluminescence wavelength tunable material, useful in e.g. solar cell and LED, comprises composite comprising metal nanoparticles attached to graphene oxide to vary light emission characteristics of graphene oxide.

KIM J H, JUN S C, OH J Y, LEE S, LEE T, WOO D H, KIM S H, KIM C K, LIM J

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M

Manufacturing single step thin film transistor, comprises preparing ink including graphene oxide or reduced graphene oxide dispersed solution; forming pattern on substrate; and forming semiconductor channel, and source and drain electrodes.

LIM J A, SONG Y W, HONG J M, CHOI W K, EOM D S, SONG Y, HONG J, CHOI W

Manufacture of high quality graphene for high quality graphene film and electronic material, involves filling carbon rod, graphite powder and metal catalyst, filling buffer gas into reaction chamber, and evaporating in reaction chamber.

KIM M J, OH I S, KU B C

Organic electroluminescent device comprises an anode, a hole injection layer, a light emitting layer, an electron injection layer and a cathode stacked on a substrate, and graphene oxide on hole injection layer or electron injection layer.

SHIN S B, KIM S I, KIM Y H, KIM C K, KIM J Y, KIM Y T

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Preparing carbon material, preferably graphene using thermal evaporation, comprises depositing liquid polymer/polymer solution onto substrate, stabilizing obtained organic nanofilm and carbonizing stabilized organic nanofilm.

KIM T, JOH H, LEE S H, KIM T W, JOH H I

Preparing polyimide-graphene composite material involves modifying graphene by covalently bonding amine-substituted aromatic/aliphatic compound on graphene surface, adding modified graphene to polyimide precursor to polymerize, and heating.

YOU N H, PARK O, KU B, LEE J H, GOH M, PARK O K, KU B C

Manufacturing fiber yarns coated with reduced graphene oxide, comprises swelling hydrophobic fiber yarns, coating graphene oxide on swollen fiber yarns by immersing in polar aprotic solvent dispersed with graphene oxide and reducing.

SONG K G, HONG S W, RYU J H, PILLAI R S, JUNG J H, GEUN S G, WON H S, HUI R J, HYEON J J