国家/地区 中国（5）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（4）
IPC H01L021/336（3） H01L029/06（3） H01L029/16（3）
H01L029/78（3） H01L029/10（2） H01L029/165（2）
H01L029/66（2）
发明人 LEE J（5） LEE J H（3） PARK S（3）
PARK S J（3） SHIN H（3） SHIN H J（3）
BYUN K（2） BYUN K E（2） LEE C（2）
LEE C S（2） LEE M（2） LEE M H（2）
LI M（2） SONG H（2） SONG H J（2）
公开年 2015（3） 2014（2）
申请年 2014（3） 
专利权人 LEE J（5）

Graphene-metal bonding structure for semiconductor device has intermediate material layer which forms edge-contact with metal layer from boundary portions of material contained in intermediate material layer that contacts metal layer.

LEE J, SHIN H, LEE M, LEE C, LEE J H, SHIN H J, LEE M H, LEE C S, LI M

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.

LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M

Graphene lithium-ion capacitor consists of cathode, anode formed using graphene material, sacrificial lithium electrode which is electrically connected to anode, membrane which disposed between cathode and anode, and electrolyte.

SEO H, PARK K, KIM K, KIM I, YANG K, LEE J, HUN S, KIHOON P, KWANGHEON K, ILHWAN K, KWANGSUK Y, JAESEOK L, YANG G

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H