国家/地区 韩国（7） 世界知识产权组织（4）
IPC部 C（5） H（5）
IPC大类 C01（5） H01（5）
IPC小类 C01B（5） H01L（5）
IPC C01B031/04（5） H01L041/04（4） H01L029/16（3）
H01L029/78（3） H01L041/08（3） H01L041/22（3）
H01L029/812（2） H01L041/18（2） H01L041/187（2）
发明人 LEE Y T（7）
公开年 2015（7）
申请年 2014（5）  2015（2） 
专利权人 LEE Y T（7）

Manufacture of low-temperature graphene growth substrate for electronic component, involves removing metal of metallic layer due to etching gas, and growing graphene on substrate in state that does not contain metallic layer.

LEE Y T

Transistor with a particle comprising a layer of graphene, comprises piezo material, and magnetic particle, where two bendings of the graphene layer are positioned to middle and the lower end portions of transistor.

LEE Y T

Transistor, has obstacle regulating circuit arranged in lower end portion of grapheme, and electric charge for controlling work function of graphene to control height of Fermi level over and work function over.

LEE Y, LEE Y T

Manufacture of graphene used for graphene bending transistor, involves forming carbon layer and metal layer, heating carbon layer, forming carbon solution layer, and sublimating resultant carbon solution layer and metal layer.

LEE Y T

Transistor for adjusting position movement and bending deformation of graphene, has obstacle regulating circuits provided in lower end portion of graphene, and obstacle control unit for controlling height of schottky obstacle.

LEE Y T

Method for growing graphene film on low-temperature substrate during manufacture of electronic component, involves providing substrate, supplying carbon-containing gas and performing inductively-coupled plasma chemical vapor deposition.

LEE Y T

Working function adjusting-type transistor for use in e.g. semiconductor integrated circuit of electronic device in electronic industry, has main body made of metal, silicone, graphene material and magnetic particle.

LEE Y T