国家/地区 韩国（4）
IPC部 H（4） C（3）
IPC大类 H01（4） C01（3）
IPC小类 H01L（4） C01B（3）
IPC H01L041/04（4） C01B031/04（3） H01L029/16（3）
H01L041/08（3） H01L041/22（3） H01L029/78（2）
H01L029/812（2） H01L041/18（2） H01L041/187（2）
发明人 LEE Y T（4）
公开年 2015（4）
申请年 2014（2）  2015（2） 
专利权人 LEE Y T（4）

Transistor, has obstacle regulating circuit arranged in lower end portion of grapheme, and electric charge for controlling work function of graphene to control height of Fermi level over and work function over.

LEE Y, LEE Y T

Manufacture of graphene used for graphene bending transistor, involves forming carbon layer and metal layer, heating carbon layer, forming carbon solution layer, and sublimating resultant carbon solution layer and metal layer.

LEE Y T

Transistor for adjusting position movement and bending deformation of graphene, has obstacle regulating circuits provided in lower end portion of graphene, and obstacle control unit for controlling height of schottky obstacle.

LEE Y T

Working function adjusting-type transistor for use in e.g. semiconductor integrated circuit of electronic device in electronic industry, has main body made of metal, silicone, graphene material and magnetic particle.

LEE Y T