国家/地区 韩国（9） 世界知识产权组织（5）
IPC部 G（5） C（4） H（3）
B（2）
IPC大类 G01（4） C23（3） H01（3）
C01（2）
IPC小类 G01N（4） C23C（3） C01B（2）
H01L（2）
IPC G01N027/414（4） G01N027/30（3） C01B032/194（2）
C23C016/26（2） C23C016/455（2）
发明人 CHO S M（8） KIM K S（6） CHO M（5）
OHHONGGI（5） CHO M G（4） OH H G（4）
SONG K S（3） KIMHYUNGKEUN（2）
公开年 2022（3） 2020（2） 2023（2）
申请年 2021（4）  2018（3）  2020（2） 
专利权人 MCK TECH CO LTD（9）

Manufacturing graphene composite structure by forming support body having observation unit corresponding to observation area and frame unit, and forming hydrophilic protective layer on upper surface of graphene layer by applying energy to graphene layer onto which organic component is transferred.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Wrinkle flattening unit for flattening wrinkles present in graphene composite structure, has rotation portion that comprises outer rotation unit having multiple suction holes communicating with branch passage and supporting one surface of composite structure.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Transistor-type biosensor for measuring concentration of target material, has sensing unit for measuring electrical signal of analysis solution containing target substance, where control electrode unit is electrically connected to sensing unit.

SONG K S, CHO M, OHHONGGI

Method for manufacturing ion detection sensor, involves applying ion-sensitive mixed layer preparation solution so as to cover portion of upper portion of source electrode and drain electrode to provide ion-sensitive mixed layer that responds to target ions.

CHO S M, CHO M G, KIM K S, OH H G, CHO M, OHHONGGI

Reference electrode for ion measurement sensor, has graphene containing fluorine functional group treated with fluorine-benzene, and graphene is non-oxidized graphene or reduced graphene oxide.

CHO S M, CHO M G, KIM K S, OH H G, SONG K S, JO D A, CHO H S, CHO M, OHHONGGI, DAAE J, HAESHIN J

Two-dimensional structure sensor for an ion sensitive field-effect transistor, includes transistor that is formed with a substrate, which is formed with a source region and a drain region, where reference electrode is formed with graphene.

SONG K S, CHO S M, KIM K S

Multilayer thin film having excellent barrier performance and mechanical flexibility useful in optical device, comprises graphene layer, first barrier layer which heals defect of graphene layer, conductive layer, and second barrier layer.

KIMHYUNGKEUN, CHO S M, KIM K S

Multilayer barrier thin film comprises graphene layer, first inorganic barrier layer position on graphene layer, organic barrier layer positioned on first inorganic barrier layer, and second inorganic barrier layer on organic barrier layer.

KIMHYUNGKEUN, CHO S M, KIM K S

Graphene transparent electrode for use in silicon liquid crystal device-based wavelength selection switch, has graphene layer which is transferred onto substrate, in which graphene has specific light transmittance value.

CHO S M, KIM K S, KIM Y