国家/地区 中国（4）
IPC部 H（4） C（3） B（2）
IPC大类 H01（4） C01（3）
IPC小类 H01L（4） C01B（3）
IPC C01B031/04（3） H01L029/16（3） H01L029/778（3）
H01L051/05（3） H01L051/30（3） C01B031/02（2）
H01L021/336（2） H01L021/768（2） H01L023/532（2）
H01L029/06（2） H01L029/51（2） H01L029/78（2）
H01L029/786（2）
发明人 SANDHU G S（3） SANDHU G（2）
公开年 2013（2）
申请年 2011（2） 
专利权人 MICRON TECHNOLOGY INC（4）

Semiconductor structure for semiconductor device comprises graphene material and graphene-lattice matching material over at least a portion of graphene material.

MEADE R E, PANDEY S C

Memory cell switch for reversibly opening and closing circuit, has ferroelectric material formed between graphene structure and conductive structure, where conductive structure provides switch into on and off states.

SANDHU G S, SANDHU G

Method of forming switch e.g. graphene-containing switch for use as select device in memory device e.g. memory array, involves electrically coupling graphene structure with exposed portion of bottom electrode.

SANDHU G S, SANDHU G

Electrically conductive laminate structure useful in electrical interconnect, comprises graphene region sandwiched between pair of non-graphene regions, where non-graphene region includes electrically conductive non-graphene region.

SANDHU G S