国家/地区 中国（6）
IPC部 B（4） C（3） H（3）
IPC大类 B82（3） C01（3） H01（3）
IPC小类 B82Y（3） C01B（3） H01L（3）
IPC B82Y030/00（2） B82Y040/00（2） C01B031/04（2）
发明人 HE M（2） YIN X（2）
公开年 2015（6）
申请年 2013（6）
专利权人 NAT CENT NANOSCIENCE TECHNOLOGY CHINA（6）

Flexible substrate graphene site effect transistor manufacturing method, involves coating electrode with water-soluble molecule thin film, and connecting graphene device with silicon chip to obtain substrate graphene site effect transistor.

FANG Y, HUANG K, LI H, YANG L

Preparing graphene nano-belt carbon fiber, comprises e.g. coating surface of metal-plated single-walled carbon nano-tubes, etching, and drawing filaments of carbon nano-tubes, molding, and post-processing.

SUN L, WANG G, YU F

Preparing porous graphene, comprises mixing graphite alkene or graphene oxide with an etchant, carrying out carbothermal reaction under anaerobic conditions, and carrying out acid treatment to remove the un-reacted and reacted etchant.

HAN B, ZHOU D

Method for preparing graphene oxidation reduced electrode for dye-sensitized solar energy battery, involves forming primary film in electric conduction base surface, and carrying out UV light irradiation for primary film.

WU F, XU P, YIN X, HE M

Preparation of nitrogen doped graphene/titanium dioxide material, useful for photocatalytic degradation of organic dyes, involves mixing graphene oxide dispersion and titanium dioxide, and annealing mixture under ammonia gas.

YIN X, ZHANG H, HE M

Method for growing germanium quantum point for preparing graphene-germanium quantum point composite material for e.g. LED, involves forming graphene layer on thin film, and performing graphene layer and germanium thin film annealing process.

LI Z, BAI B, YANG X, WANG X, XU Y, DAI Q, QIU X