国家/地区 英国（4） 世界知识产权组织（4） 台湾（2）
IPC部 H（4） C（3）
IPC大类 H01（4） C01（2） C23（2）
IPC小类 H01L（4） C01B（2） C23C（2）
IPC C01B032/182（2） C23C016/02（2） C23C016/26（2）
C23C016/455（2） H01L021/02（2） H01L021/20（2）
H01L029/16（2）
发明人 KAINTH J（5）
公开年 2022（3） 2023（2）
申请年 2022（3）  2021（2） 
专利权人 PARAGRAF LTD（5）

Method for producing electronic device precursor, involves exposing dielectric material of structure region by removing all resist material, and forming layer of material on and across region of layer structure.

BAINES R, GLASS H F J, KAINTH J, BUTTRESS S

Graphene substrate comprises graphene layer structure directly on metal oxide layer which is directly on support layer.

DIXON S, KAINTH J, GUINEY I, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Wafer for CVD growth of uniform graphene at temperature in excess temperature, comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across insulating layer, where barrier layer is alumina and/or hafnium oxide layer.

JAGT R, KAINTH J, DIXON S

Manufacturing electronic device precursor e.g. organic LED, involves providing silicon wafer having growth surface, forming insulative layer on growth surface, forming graphene monolayer or multi-layer structure on insulative layer, forming further layers and/or electrical contacts.

BADCOCK T J, KAINTH J, DIXON S, GUINEY I, GRIFFIN R M