国家/地区 中国（5）
IPC部 H（4） C（3） B（2）
IPC大类 H01（4） C01（3）
IPC小类 H01L（4） C01B（3）
IPC C01B031/04（3） H01L021/336（3） H01L029/16（3）
H01L029/78（3） H01L029/06（2） H01L029/66（2）
H01L029/786（2）
发明人 PARK S（5） PARK S J（4） LEE J（3）
BYUN K（2） BYUN K E（2） HEO J（2）
HEO J S（2） HUH J（2） LEE J H（2）
SHIN H（2） SHIN H J（2） SONG H（2）
SONG H J（2）
公开年 2014（2） 2015（2）
申请年 2013（2）  2015（2） 
专利权人 PARK S（5）

Graphene device i.e. multi-functional device, for use in e.g. electronic apparatus e.g. transistor, has gate for facing functional layer with graphene layer, and gate insulation layer formed between graphene layer and gate.

HEO J, LEE K, PARK S, HEO J S, LEE K Y, PARK S J, LEE G, HUH J

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.

LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J