国家/地区 韩国（8）
IPC部 C（8）
IPC大类 C01（8） B01（4）
IPC小类 C01B（8）
IPC C01B031/02（8）
发明人 JUNG K Y（3） KIM Y J（3） LEE S Y（3）
YEONG L S（2）
公开年 2013（4） 2014（3）
申请年 2012（4）  2011（3） 
专利权人 RES INST IND SCI TECHNOLOGY（8）

Manufacturing graphene useful as filler for transparent electrode, comprises crushing graphene nanoplate with expanded graphite or exfoliated structure, dispersing in solvent, ultrasonically treating, centrifuging, filtering and drying.

AN J C, KIM Y J, LEE S Y

Apparatus for producing graphene, comprises plasma arc generation unit to generate plasma arc on substrate surface, carbon source supply unit to supply carbon source and laser irradiation unit to irradiate laser and dissociate carbon atoms.

YEONG L M, LEE M Y

Manufacture of graphene-polymer resin composite used for graphene-polymer resin complex fiber, involves dissolving graphene and polymer resin in polar solvent, ultrasonically-treating solution, forming solid material, and pulverizing.

BAE I J, HWANG S H, KIM B J, KIM M S, LEE S Y, PARK S M, PARK Y B

Fabricating thin film for preventing oxidation of metals, by preparing graphene oxide suspension on metal surface, laminating suspension in substrate, reducing graphene oxide from substrate, and coating restored graphene oxide.

KANG D W, KIM Y J, SHIN H S

Manufacture of graphene nanoribbon involves immerging carbon nanotubes in ultra-low temperature tub, injecting immersed carbon nanotubes in liquid water and forming ultra-low temperature tubes by liquid nitrogen.

CHEOL A J, JU K B, JUNG K Y, MIN P S, YEONG L S

Manufacture of boron-doped graphene involves mixing boron compound and graphite, and heating mixture under argon atmosphere.

KIM Y, JUNG K Y

Manufacture of nitrogen-doped graphene electrode used for capacitor and electrical double layer condenser, involves peeling graphene from carbonaceous material and doping with nitrogen by plasma process.

KIM Y J, LEE S Y, JUNG K Y, YEONG L S

Manufacture of nitrogen-containing graphene involves reacting natural graphite and nano carbon fiber powder, and replacing nitrogen functional group within lattice of graphene by processing in nitrogen atmosphere.

IK P H, IL J B, JUNG C A, SEI M P, YONG J K