国家/地区 中国（7）
IPC部 C（6）
IPC大类 C23（3） C01（2） C03（2）
IPC小类 C23C（3） C01B（2）
IPC C23C016/26（2）
发明人 CHEN Z（7）
公开年 2017（6）
申请年 2016（7）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（7）

Graphene glass has graphene film which is completely sealed between adhered glasses, so that first glass and second glass are not adhered by portion separated by graphene film.

ZHANG Y, YU G, CHEN Z, SUI Y, GE X, DENG R, LIANG Y, HU S

Graphene film surface hydrophilicity improvement involves configuring surfactant solution, and then placing graphene film with substrate in surfactant solution for period of time.

CHEN Z, YU G, ZHANG Y, SUI Y, GE X, HU S, LIANG Y

Growing of graphene with unbonded metal, involves depositing oxide on one surface of metal foil, defining other surface as metal surface, and stacking or rolling up metal foil on oxide surface towards metal surface.

YU G, ZHANG Y, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S

Preparation of graphene glass involves providing glass component and graphene film and then processing, providing glass component and then covering using graphene film, carrying out heat treatment, and completely sealing.

ZHANG Y, YU G, CHEN Z, SUI Y, GE X, DENG R, LIANG Y, HU S

Growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure used in microelectronic device, involves heating substrate, dissolving carbon source on surface of substrate and heating source materials.

YU G, WU T, XIE X, SHI Z, CHEN J, ZHANG Y, SUI Y, CHEN Z

Non-adhesion graphene preparing metal foil layer stacking method, involves stacking layers of metal foil, separating metal foil, and utilizing chemical vapor deposition in each surface of metal foil stacked structure to prepare graphene.

ZHANG Y, YU G, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S

Graphene-based surface enhancement Raman substrate, has substrate main body whose surface is formed with porous graphene structure, where porous graphene structure is fixed with metal granule and formed with multi-hole graphene films.

SUI Y, YU G, ZHANG Y, CHEN Z, GE X, ZHANG H