国家/地区 中国（5）
IPC部 C（2） G（2） H（2）
IPC大类 G01（2） H01（2）
IPC小类 G01N（2）
IPC
发明人 DING G（2） LIANG Y（2） WU T（2）
公开年 2020（5）
申请年 2020（5）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（5）

Graphene-phase change material structure comprises a phase change material layer, and a graphene layer is arranged on the top or bottom of the phase change material layer.

SONG Z, SONG W, ZHAO J, WU T

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Graphene quantum dot transverse size characterization method based on flight time mass spectrum involves dissolving graphene quantum dot powder in a solvent to prepare a first mixed solution.

DING G, YANG S, LIANG Y, GE Z

Reversely transferring graphene comprises e.g. providing graphene grown on metal substrate, spin-coating first colloid on first surface of graphene to form first colloidal graphene-metal substrate structure, and sticking tape on first gel.

CHEN Z, YU G, ZHANG Y, SUI Y, LIANG Y, HU S, LI J, KANG H, WANG S

Graphene-based surface-enhanced Raman scattering substrate manufacturing method, involves applying external force to composite film layer to break composite film layer for obtaining cross section layer as Raman scattering substrate.

HE P, DING G, CAO Z