国家/地区 中国（6）
IPC部 A（3） C（3）
IPC大类 C01（3） A61（2）
IPC小类 C01B（3） A61L（2）
IPC A61L027/06（2） C01B031/04（2）
发明人 CHEN D（6）
公开年 2014（2） 2016（2）
申请年 2013（3）  2014（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（6）

Method for modifying surface of medical titanium material, involves preparing graphene film on surface of medical titanium material.

DI Z, WANG G, LI J, LIU X, CHEN D, GUO Q, MA J, XUE Z, ZHANG M

Doped graphene preparing method, involves forming nickel thin film layer on copper substrate, and N-type graphene and P-type doped graphene formed respectively on N-type doped element-rich area and P-type doped element-rich zone.

DI Z, CHEN D, DING G, GUO Q, MA J, WANG G, XIE X, XUE Z, ZHANG M, ZHENG X, DAI J

Use of germanium based graphene for producing antimicrobial effect by inhibiting Gram-positive bacteria e.g. Staphylococcus aureus, and Gram-negative bacteria e.g. Escherichia coli, providing anti-fatigue effect and inhibiting tumor.

DI Z, CHEN D, DING G, GUO Q, LI J, LIU X, WANG G, XIE X, ZHANG M, ZHENG X

Promoting osteogenesis useful for preparing medicine for treating bone defects and osteoporosis, and exhibiting anti-cancer and anti-aging effect, involves using germanium-graphene.

XIE X, ZHANG M, LI J, YE L, LIU X, DI Z, CHEN D, DING G, GUO Q, WANG G

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z

Controlling growth of number of graphene layer involves forming first nickel layer on copper substrate, injecting using ion injection method in nickel layer, annealing, introducing carbon by copper in nickel layer, reconstructing graphene.

CHEN D, DI Z, DING G, LU Z, MA J, WANG G, XIE X, ZHANG M