国家/地区 中国（6）
IPC部 C（5）
IPC大类 C01（2） C23（2） C30（2）
IPC小类 C01B（2） C23C（2） C30B（2）
IPC C23C016/02（2） C30B025/18（2） C30B029/02（2）
发明人 YU G（6）
公开年 2015（3） 2017（3）
申请年 2015（6）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（6）

Preparing copper substrate based on cleaning process for manufacturing chemical vapor deposition graphene, involves providing copper substrate for preparing graphene, and then treating copper substrate in aerobic environment.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Dry transfer of graphene metal substrate comprises placing long graphene metal substrate on target substrate, heating under protective atmosphere at melting temperature or more and cooling to room temperature.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

Method for increasing ohm contacting of metal electrode and graphene, involves performing metal ion solution soaking process, and forming surface of metal electrode with insulation substrate using electron beam.

CHEN Z, GE X, XU W, SUI Y, ZHANG H, ZHANG Y, YU G

Improving cleanliness of graphene surface involves completely transferring organic adhesive, and combination of graphene and target substrate into solvent contained in plastic sealed container, and heating container to obtain graphene.

CHEN Z, GE X, XU W, SUI Y, ZHANG H, ZHANG Y, YU G