国家/地区 中国（6）
IPC部 C（5） B（3） H（2）
IPC大类 C01（5） C23（5） B82（3）
C30（2） H01（2）
IPC小类 C01B（5） C23C（5） B82Y（3）
C30B（2） H01L（2）
IPC C01B031/04（5） C23C016/26（4） B82Y040/00（3）
C23C016/02（3） B82Y030/00（2）
发明人 DING G（5） XIE X（5） JIANG M（4）
TANG S（3） CHEN J（2） DI Z（2）
GONG Q（2） SUN L（2） WANG S（2）
公开年 2012（6）
申请年 2012（4）  2011（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（6）

Method of preparing double-gate MOSFET based graphene used in e.g. microelectronics field, involves forming back grid electrode over high-k gate thin film at back of substrate, after forming graphene at interface of substrate layers.

CHAI Z, CHEN J, LUO J, WU Q, YU T

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Growing graphene, comprises growing graphene on surface of catalyst using carbon source through chemical vapor deposition, or growing graphene on catalyst surface and interface of catalyst contacting with substrate.

DI Z, DING G, GONG Q, JIANG M, SUN L, WANG S, XIE X, ZHU Y

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X