国家/地区 美国（5） 中国（2） 台湾（2）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L021/02（3） H01L021/768（3） H01L023/522（3）
H01L023/532（3） H01L021/285（2） H01L021/324（2）
H01L021/44（2） H01L023/528（2） H01L029/16（2）
发明人 CHENG C（2） LEE H（2） LEE M（2）
YANG S（2）
公开年 2015（2） 2016（2）
申请年 2015（5）
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（5）

Method for forming dual-gated graphene device, involves performing annealing process, after transferring graphene layer, and forming annealed graphene layer with secondary carrier mobility greater than transferred carrier mobility.

LIU S, PAN S C, WU C, CHENG T, CHENG C, PAN Z, WU Z, PAN S Z

Capacitor for semiconductor device, has dielectric sheet arranged over first graphene structure, and second graphene structure provided on dielectric sheet and comprising multiple graphene layers.

JOU C, KO C, CHIU P, CHENG C, LU C, CHEN H, HSUEH F, HUANG C, JOU C P, KO C H, CHIU P W, CHENG C C, LU C C, HUANG C F, CHEN H N, HSUEH F L, HUANG Q, KE Z, QIU B, XUE F, ZHOU C, ZHENG Z, LV Z, WANN C H

Method of manufacturing device, such as, transistor, capacitor, resistor, involves catalytically growing graphene layer and depositing amorphous carbon layer are performed simultaneously.

YANG S, LEE H, LEE M, YEH C, LIOU P

Method for manufacturing graphene for integrated circuits to be formed from variety of active and passive devices, involves forming contacts to graphene layer on device substrate, where contacts are on opposite sides of gate electrode.

DAL MARK V

Semiconductor device for use in e.g. personal computer, has carbon-based adhesive layer arranged over sidewalls, and carbon nano-tube arranged within insulating material over graphene-based conductive layer and carbon-based adhesive layer.

YANG S, LEE M, LEE H, WU H