国家/地区 美国（4） 中国（2） 台湾（2）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L021/768（2） H01L023/522（2） H01L023/528（2）
H01L023/532（2） H01L029/423（2） H01L029/66（2）
发明人
公开年 2018（3）
申请年 2017（4）
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（4）

Semiconductor device, has non-insulator structure formed in source/drain region or gate structure, carbon nano-tube placed over structure, dielectric layer surrounding nano-tube, and graphene-based conductive layer placed over nano-tube.

CHOU Y, CHUANG K, ZHOU Y, ZHUANG G

Semiconductor structure has graphene barrier layer formed on exposed surfaces of dielectric layer and having portion provided between conductive layer and dielectric layer.

YANG S, LEE M, SHUE S, LI M, SUI X

Method for forming e.g. transistor, involves performing anneal process, removing metal layer after performing anneal process, and etching graphene to define channel from graphene, where carbon layer is transformed into graphene.

LIN M, LIN S, LEE S

Structure for providing a Gate-All-Around (GAA) device, includes nanobar which extends from graphene layer and along direction normal to vertical plane defined by graphene layer.

YANG C, LIU C, LIN H, YEH L