国家/地区 美国（4） 中国（2） 韩国（2）
IPC部 H（4） C（2）
IPC大类 H01（4） C01（2）
IPC小类 H01L（4） C01B（2）
IPC C01B031/04（2） H01L021/02（2） H01L021/768（2）
H01L023/522（2） H01L023/532（2） H01L029/16（2）
H01L029/66（2） H01L029/786（2）
发明人
公开年 2016（4）
申请年 2015（2） 
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（4）

Method for manufacturing carbon layer for semiconductor device, involves forming active device on device substrate, and graphene layer forming conductive layer of active device.

VAN D M

Capacitor for semiconductor device, has dielectric sheet arranged over first graphene structure, and second graphene structure provided on dielectric sheet and comprising multiple graphene layers.

JOU C, KO C, CHIU P, CHENG C, LU C, CHEN H, HSUEH F, HUANG C, JOU C P, KO C H, CHIU P W, CHENG C C, LU C C, HUANG C F, CHEN H N, HSUEH F L, HUANG Q, KE Z, QIU B, XUE F, ZHOU C, ZHENG Z, LV Z, WANN C H

Semiconductor device e.g. transistor, has second active area, graphene channel that is formed between first and second active areas, comprises first and second sides and first in-plane gate that is proximate to first side.

LIN M, LIN S, LEE S, LIN M Y, LIN S Y, LEE S C, LI S

Method of manufacturing device, such as, transistor, capacitor, resistor, involves catalytically growing graphene layer and depositing amorphous carbon layer are performed simultaneously.

YANG S, LEE H, LEE M, YEH C, LIOU P