国家/地区 中国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L033/00（3） H01L033/06（3） H01L033/14（2）
H01L051/50（2） H01L051/52（2） H01L051/56（2）
发明人 LIU J（4）
公开年 2017（3）
申请年 2016（3） 
专利权人 TCL GROUP CO LTD（4）

QLED, comprises substrate, anode, graphene oxide layer, quantum dot light emitting layer, oxidized graphene derivative layer and cathode, where graphene oxide derivative layer is composed of oxidized graphene derivative.

LIU J, CAO Y, XIANG C, QIAN L

Quantum dot LED device, has substrate formed with hole injection layer, hole transporting layer and quantum dot light emitting layer, where hole injection layer is made of hole injection material that contains graphene oxide.

LIU J

Preparation of quantum dot light-emitting diode involves forming layer of graphene oxide on substrate, coating mixed aqueous solution of tea polyphenol and hydrogen iodide, and forming e.g. light-emitting layer on resultant graphene.

LIU J, CAO Y, XIANG C

Laminated QLED device, has quantum dot light emitting layer and first anode substrate that are laminated on cathode substrate, where second anode substrate is made of graphene oxide material.

LIU J, CAO Y, XIANG C