国家/地区 日本（3） 美国（3） 韩国（2）
IPC部 H（4） C（3） B（2）
IPC大类 H01（4） C01（3） B01（2）
IPC小类 H01L（4） C01B（3） B01J（2）
IPC C01B031/02（3） B01J023/755（2） C01B031/04（2）
H01L021/28（2） H01L021/768（2） H01L023/532（2）
发明人 MATSUMOTO T（3） KAGAYA M（2）
公开年 2015（2） 2016（2）
申请年 2015（4）
专利权人 TOKYO ELECTRON LTD（4）

Patterning component designed to contact with substrate having graphene oxide film used in wirings of damascene structure of semiconductor device, consists of metal layer with pattern formed on patterning component.

MATSUMOTO T, KASHIWAGI Y

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Processing of to-be-processed material for electronic device, involves forming resist mask on graphene film of to-be-processed material and remove resist residue on graphene film by exposing to-be-processed material to oxygen radicals.

KAGAYA MUNEHITO, KAGAYA M

Graphene machining method used to prevent graphene edges from collapsing while preventing electric charges from remaining in a graphene ribbon, comprises irradiating gas cluster beam onto graphene.

MATSUMOTO T, DOBASHI K