国家/地区 美国（4） 日本（3） 韩国（3）
IPC部 C（4） H（2）
IPC大类 C23（4） C01（3） H01（2）
IPC小类 C23C（4） C01B（3） H01L（2）
IPC C23C016/455（4） C01B031/04（3） C23C016/26（3）
C01B031/02（2） C23C016/02（2） C23C016/18（2）
C23C016/46（2） H01L021/28（2） H01L021/67（2）
H01L029/16（2）
发明人 NISHIDE D（4）
公开年 2017（2）
申请年
专利权人 TOKYO ELECTRON LTD（4）

Forming method for base film of graphene involves heating substrate to temperature at which impurities included in formed metal film are eliminated as gas and to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Production of graphene used in semiconductor applications, involves forming catalyst metal film on substrate, which includes introducing carbons into catalyst metal film, heating catalyst metal film, and cooling catalyst metal film.

NISHIDE D, MATSUMOTO T, IFUKU R

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D