国家/地区 日本（4） 韩国（4） 美国（4）
IPC部 C（5） H（3）
IPC大类 C01（4） C23（3） H01（3）
IPC小类 C01B（4） C23C（3） H01L（3）
IPC C01B032/15（2） C01B032/18（2） C01B032/182（2）
C01B032/186（2） C23C016/26（2） H01L021/02（2）
H01L021/3065（2） H01L021/67（2） H01L029/16（2）
发明人 MATSUMOTO T（5） IFUKU R（4）
公开年 2018（5）
申请年 2018（3）  2017（2） 
专利权人 TOKYO ELECTRON LTD（5）

Method for processing substrate of MOSFET during manufacturing of integrated circuit, involves providing planarized substrate, followed by selectively depositing silicon dioxide film on first material and removing graphene layer.

TAPILY K N, MATSUMOTO T, KASHIWAGI Y, LEUSINK G J

Planarizing irregularities in graphene layer surface formed on substrate, comprises planarizing graphene layer by removing convex portion by anisotropically etching using plasma etching in in-plane direction from edge portion of graphene.

IFUKU R, HIGUCHI H, MATSUMOTO T

Anisotropic etching of graphene used as electronic material, involves generating hydrogen plasma using microwave plasma, and anisotropically etching graphene using generated hydrogen plasma.

IFUKU R, MATSUMOTO T

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Formation of two-dimensional material e.g. graphene, involves forming amorphous film on substrate, modifying surface of amorphous film, and supplying raw material of two-dimensional material onto modified amorphous film.

IFUKU R, MATSUMOTO T