国家/地区 中国（7）
IPC部 H（5） C（2）
IPC大类 H01（5） C01（2）
IPC小类 H01S（5） C01B（2）
IPC H01S003/067（4） H01S003/098（3） C01B031/04（2）
H01S003/08（2） H01S003/11（2）
发明人 LIU J（6） WANG P（5） XU J（2）
公开年 2011（4） 2012（3）
申请年 2011（7）
专利权人 UNIV BEIJING TECHNOLOGY（7）

Manufacture of graphene involves soaking silicon carbide wafer in mixed solution of hydrogen sulfide and hydrogen peroxide, soaking silicon carbide wafer in hydrofluoric acid solution, drying, irradiating laser on silicon carbide.

CHEN X, JI L, JIANG Y, LI Q, WU Y, ZENG Y

Silicon carbide substrate epitaxial growth based graphene passive mode-locked laser, has wavelength division multiplexer connected with silicon carbide substrate that is connected with graphene to form laser mode locking device.

LIU J, WANG P

Graphene passive mode-locked fiber laser, has circulator whose end part is connected with polarization controller that is connected with multiplex optical fiber coupler of wavelength division multiplex optical fiber coupler.

LIU J, WANG P, XU J

Graphene passive Q-nanosecond impulse fiber laser for non-linear optical field, has saturable absorber graphene saturable absorber made from oxidized graphite alkene and graphite alkene polymer.

LIU J, WANG P

Graphene passive mode-locking laser has polarization controller that is connected with signal end of wavelength division multiplexer.

LIU J, WANG P

Graphene passive mode-locking optical fiber laser, has wave division multiplexing optical fiber coupler, gain and single-mode optical fibers, output coupler, circulator, and polarization controller that forms annular cavity structure.

LIU J, WANG P, XU J

Single layer graphene preparation includes expanding graphite oxide, adding anhydrous ethanol to disperse the graphite, performing ultrasonic treatment, adding hydrazine hydrate, and performing hydrothermal reaction.

WANG H, YAN H, ZHU M, LIU J, ZHANG Y, WU C