国家/地区 中国（8）
IPC部 H（5） B（2） C（2）
IPC大类 H01（5） C01（2）
IPC小类 H01M（3） C01B（2） H01S（2）
IPC H01M004/38（3） H01M004/62（3）
发明人 WANG X（8）
公开年 2017（2） 2021（2）
申请年 2017（2）  2021（2）  2022（2） 
专利权人 UNIV CHANGCHUN SCI TECHNOLOGY（8）

Film-protected three-dimensional porous zinc cathode material useful for zinc-based battery, prepared by adding etching agent, organic/inorganic cladding material, and binding agent into solvent, stirring and mixing to form slurry, and uniformly coating slurry on zinc foil, and vacuum drying.

LIU G, WANG T, YANG Y, DONG X, YU W, LIU D, WANG J, LI G, WANG X

Self-heat-absorbing reshaped ice/deicing micro-array structure preparation method, involves obtaining blade array micro-structure, and finishing shape memory alloy substrate with blade array micro-processing.

REN W, HOU Y, WANG Y, LIAN Z, XU J, WANG X, WAN Y

Storage composite material comprises cobalt-copper-silicon composite with nitrogen and sulfur co-doped graphene.

LIU W, FAN W, SUN Y, LIU D, ZHAO J, LIU H, CHEN P, WANG Q, WANG X, WANG F

Cobalt-sulfur hydrogen storage composite material useful for nickel-hydrogen battery comprises e.g. porous polyaniline/reduced graphene oxide.

LIU W, SUN Y, LIU D, LIU H, WANG Q, ZHAO J, CHEN P, FAN W, WANG X, GUO X

Vertical cavity surface emitting semiconductor laser electrode, has graphene film layer and lead-out metal wire connected with each other, and semiconductor laser electrode body connected with film layer that is connected with laser chip.

WEI Z, TANG J, FANG X, WANG X, CHU X, WANG D, WANG F, FENG Y, ZHANG J

Heat sink for semiconductor laser, has graphene film layer that is coated with copper heat sink formed graphene and that is prepared on copper heat sink surface of copper heat sink.

TANG J, WEI Z, FANG X, FANG D, WANG D, WANG F, FENG Y, LI J, CHU X, WANG X

Preparation of light catalytic material based on energy band modulation of double quantum dot sensitized graphene/oxide composite structure, involves migrating graphene to substrate material surface of deposited metal quantum dots.

FANG X, CHEN X, FANG F, LI J, WANG X, WEI Z, CHU X, MIAO Y, LI R

Preparing graphene material using laser heating device, comprises e.g. annealing nickel film plated on substrate placed on quartz tube and regulating laser optical path and parameters on laser, injecting argon and hydrogen and heating.

FANG F, FANG X, HAN Z, LI J, TAN X, WANG F, WANG X, WANG Y, WEI Z, CHEN F, FANG D, GAO X, CHU X, NIU S, TANG J