国家/地区 中国（8）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C01B031/04（7）
发明人 ZHANG W（8）
公开年 2013（4）
申请年 2013（3）  2012（2） 
专利权人 UNIV CHINA ELECTRONIC SCI TECHNOLOGY（8）

Method for doping large-range nanoparticle continuously-adjustable graphene in electronic information material and component field, involves depositing layer of tin oxide film on graphene, and performing annealing treatment on structure to obtain doped graphene.

ZHANG W, LI X, HUANG Z, QIAN L

Preparation of nitrogen-doped graphene quantum dot dispersion for biological imaging and fluorescent probe, involves dissolving glucose in water, adding aqueous ammonia, reacting, removing excess ammonia, purifying and centrifuging.

CHEN Y, LI P, QI F, ZHANG W, LIU J, HE J, ZHENG B

Preparing double-layer graphene thin film used in field of e.g. micro-electronics, comprises e.g. coating catalyst on the surface of metal foil/thin film substrate, drying, placing in reaction chamber, pumping vacuum, and filling hydrogen.

LI P, WANG Z, CHEN Y, ZHANG W, LIU J

Preparation of epitaxial graphene, involves cleaning surface of silicon carbide substrate in induction heating graphite boat, evacuating, cooling, re-evacuating, and cooling to room temperature.

CHEN Y, HAO X, LI P, LI Y, WANG Z, ZHANG W, LIU J

Liquid phase fluorine intercalation of silicon surface silicon carbide epitaxial graphene comprises e.g. immersing cleaned sample to be intercalated in mixed acid solution, adding molybdenum metal, reacting, cleaning, and drying.

LI Y, LIU J, CHEN Y, HAO X, LI P, WANG Z, ZHANG W

Preparation of graphene powder, involves dissolving and dispersing graphite oxide in green reducing agent, reacting in hydrothermal reactor, and filtering.

ZHANG W, LI P, WANG Z, ZHENG B, LI Y, HAO X, LIU J, CHEN Y, HE J

System used in preparing graphene by silicon carbide thermal cracking method, comprises silicon carbide substrate at center of vacuum cavity, induction heating graphite boat, carbon felt insulating layer, hydrogen bypass, and argon bypass.

CHEN Y, HAO X, LI P, LI Y, LIU J, WANG Z, ZHANG W

Method for preparing single-crystal graphene in electronic device, involves coating hydrocarbon in metal foil, implementing thermal decomposition treatment in foil, and cooling foil to room temperature to obtain graphene sheet metal.

CHEN Y, LI P, LI Y, WANG Z, ZHANG W