国家/地区 美国（7）
IPC部 H（6） C（5）
IPC大类 H01（6） C01（3） C09（2）
IPC小类 C01B（3） H01L（3） H01G（2）
H01M（2）
IPC C01B032/198（2） H01G011/36（2） H01G011/86（2）
H01L021/02（2） H01M004/587（2）
发明人 ALAZMI A S（2） COSTA P M F J（2）
公开年 2018（4） 2017（3）
申请年 2017（7）
专利权人 UNIV KING ABDULLAH SCI TECHNOLOGY（7）

Making reduced graphene oxide, comprises adding graphene oxide to container and adding electrically active bacteria to container and reduced graphene oxide is produced period of time by interaction of the active bacteria and graphene oxide.

KALATHIL S, KATURI K P, ALAZMI A S, COSTA P M, SAIKALY P E

Photodetector and/or photovoltaic device used e.g. in e.g. low-light level biological imaging, comprises semiconducting substrate, and solution having graphene quantum dot-modified and poly(ethylene-dioxythiophene) polystyrene sulfonate.

HE J, TSAI M

Composition useful as an electrode composition for supercapacitor electrodes, comprises graphene oxide or reduced graphene oxide.

ALAZMI A S, DA COSTA P M

Method for manufacturing electronic device, involves forming graphene precursor on first portion of common substrate, forming graphene layer on graphene precursor, and forming semiconductor device on second portion of common substrate.

HUSSAIN A M

Production of graphene oxide used in e.g. energy storage device, involves oxidizing graphite, adding potassium permanganate, water, heating, adjusting graphene oxide-dispersion, adding alcohol and washing isolated graphene oxide.

RASUL S, COSTA P M F J, ALAZMI A

Carbon-based semiconductor material useful as a semiconductor layer of a device, comprises reduced graphene oxide that is reduced so that the semiconductor material has a specified resistance/humidity variation.

TAI Y, LUBINEAU G

Producing graphene used in e.g. energy storage system, electronic industry and energy industry, comprises subjecting at least one graphite intercalation compound to expansion conditions.

PATOLE S P, COSTA P M F J